s mhop microelectronics c orp. a symbol v ds v gs i dm 2 62.5 w a p d c 75 -55 to 175 i d units parameter 100 35 103 c/w v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w product summary v dss i d r ds(on) (m ) typ 100v 35a 30 @ vgs=10v features super high dense cell design for extremely low rds(on). high power and current handling capability. to-220 package. stp series to-220 s d g s g d n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a t c =25 c -pulsed a a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja www.samhop.com.tw apr,22,2014 1 details are subject to change without notice. a 29.3 t c =70 c t c =70 c 52.5 w STP35N10 ver 1.1 green product
4 symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) 1.5 v 30 g fs 12 s v sd c iss 1490 pf c oss 155 pf c rss 100 pf q g 36 nc 41 nc q gs 39 nc q gd 22 t d(on) 19 ns t r 2.6 ns t d(off) 10 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delaytime v ds =50v,i d =17.5a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =17.5a v ds =10v , i d =17.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3.5 36 b f=1.0mhz b v ds =50v,i d =17.5a, v gs =10v drain-source diode characteristics v gs =0v,i s =5a 1.3 v notes www.samhop.com.tw 2 a.drain current limited by maximum junction temperature. b.guaranteed by design, not subject to production testing. apr,22,2014 STP35N10 ver 1.1 2.5 0.8
www.samhop.com.tw apr,22,2014 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 60 48 36 24 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 30 24 18 12 6 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 90 75 60 45 30 15 1 2.5 2.2 1.9 1.6 1.3 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =17.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 12 v gs =10v v gs =5v v gs =6v v gs =7v 60 48 36 24 12 1 STP35N10 ver 1.1 v gs =8v
www.samhop.com.tw apr,22,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics figure 12. maximum safe operating area 110 100 1 10 100 300 vds=50v,id=1a vgs=10v td(on) tr td(off ) tf 120 100 80 60 40 20 0 10 0 125 c 75 c 25 c i d =17.5a 10 1 20 ciss coss crss 2100 1750 1400 1050 700 350 0 10 15 20 25 30 0 5 10 8 6 4 2 0 v ds =50v i d =17.5a 8 6 4 2 0 1.25 1.00 0.75 0.50 0.25 25 c 75 c 125 c STP35N10 ver 1.1 0 3 6912 15 18 21 24 i d , drain current(a) v ds , drain-source voltage(v) 0.1 1 10 100 100 10 1 0.3 r ds (o n) li m it v gs =10v single pulse t c =25 c d c 10ms 1ms 100 us 10us
t p v (br )dss i as 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 www.samhop.com.tw 5 unclamped inductive test circuit unclamped inductive waveforms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance r g i as 0.01 t p d.u.t l v ds + - dd 20v v apr,22,2014 STP35N10 ver 1.1
www.samhop.com.tw 6 apr,22,2014 STP35N10 ver 1.1
to-220 tube www.samhop.com.tw 7 apr,22,2014 STP35N10 ver 1.1
www.samhop.com.tw 8 top marking definition to-220 xxxxxx product no. samhop logo production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STP35N10 apr,22,2014 STP35N10 wafer lot no. smc internal code no. (a,b,c...z) ver 1.1
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